RAHIMI, S. Effect of the Improved-Shaped Gate in HEMT Transistors Performance. International Journal of Sciences: Basic and Applied Research (IJSBAR), [S. l.], v. 45, n. 2, p. 122–127, 2019. Disponível em: https://www.gssrr.org/index.php/JournalOfBasicAndApplied/article/view/9959. Acesso em: 5 may. 2024.